Superconducting contacts on YBa₂Cu₃O_7-x in magnetic fieldsWIECK, A. D.Applied physics letters. 1988, Vol 53, Num 13, pp 1216-1218, issn 0003-6951Article

In-plane-gated quantum wire transistor fabricated with directly written focused ion beamsWIECK, A. D; PLOOG, K.Applied physics letters. 1990, Vol 56, Num 10, pp 928-930, issn 0003-6951Article

Low-temperature transport characteristics of AlGaAs-GaAs in-plane-gated wiresHIRAYAMA, Y; WIECK, A. D; PLOOG, K et al.Journal of applied physics. 1992, Vol 72, Num 7, pp 3022-3028, issn 0021-8979Article

Quantum ballistic transport in in-plane-gate transistors showing onset of a novel ferromagnetic phase transitionTSCHEUSCHNER, R. D; WIECK, A. D.Superlattices and microstructures. 1996, Vol 20, Num 4, pp 615-622, issn 0749-6036Article

Resonant interaction of optical phonons with two-dimensional electron and hole space-charge layers on siliconHEITMANN, D; BATKE, E; WIECK, A. D et al.Physical review. B, Condensed matter. 1985, Vol 31, Num 10, pp 6865-6868, issn 0163-1829Article

Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100)YANG, J. L; REUTER, D; WIECK, A. D et al.Journal of crystal growth. 2006, Vol 293, Num 2, pp 278-284, issn 0022-0248, 7 p.Article

Proposal of novel electron wave coupled devicesTSUKADA, N; WIECK, A. D; PLOOG, K et al.Applied physics letters. 1990, Vol 56, Num 25, pp 2527-2529, issn 0003-6951Article

Reply to Comment on 'Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN' [Phys. Status Sohdi A 205, 1872 (2008)]KAMMERMEIER, T; NEY, A; WIECK, A. D et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 8, pp 1957-1959, issn 1862-6300, 3 p.Article

Observation of resonant photon drag in a two-dimensional electron gasWIECK, A. D; SIGG, H; PLOOG, K et al.Physical review letters. 1990, Vol 64, Num 4, pp 463-466, issn 0031-9007Article

Velocity modulation in focused-ion-beam written in-plane-gate transistorsBEVER, T; KLITZING, K. V; WIECK, A. D et al.Applied physics letters. 1993, Vol 63, Num 5, pp 642-644, issn 0003-6951Article

Two-dimensional plasmons in hole space charge layers on siliconBATKE, E; HEITMANN, D; WIECK, A. D et al.Solid state communications. 1983, Vol 46, Num 3, pp 269-271, issn 0038-1098Article

High frequency characteristics of in-plane-gate transistorsMCLEAN, J. S; WIECK, A. D; BLEDER, M et al.Applied physics letters. 1992, Vol 61, Num 11, pp 1324-1325, issn 0003-6951Article

Parallel excitation of hole and electron intersubband resonances in space-charge layers on siliconWIECK, A. D; BATKE, E; HEITMANN, D et al.Physical review. B, Condensed matter. 1984, Vol 30, Num 8, pp 4653-4663, issn 0163-1829Article

Odd and even Kondo effects from emergent localization in quantum point contactsIQBAL, M. J; LEVY, Roi; VAN DER WAL, C. H et al.Nature (London). 2013, Vol 501, Num 7465, pp 79-83, issn 0028-0836, 5 p.Article

Hot-electron bend resistance in a ballistic GaAs/AlGaAs cross junctionWIEMANN, M; CETINKAYA, A; WIESER, U et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 6, pp 2128-2130, issn 1386-9477, 3 p.Conference Paper

Electrostatic electron piston pump with in-plane gate transistorsDRAGHICI, M; SALLOCH, D; MELNIKOV, A et al.Physica status solidi. B. Basic research. 2007, Vol 244, Num 8, pp 3009-3014, issn 0370-1972, 6 p.Article

Hole and electron wave functions in self-assembled InAs quantum dots : a comparisonREUTER, D; KAILUWEIT, P; ROESCU, R et al.Physica status solidi. B. Basic research. 2006, Vol 243, Num 15, pp 3942-3945, issn 0370-1972, 4 p.Conference Paper

Transport spectroscopy of a quantum point contact created by an atomic force microscopeFRICKE, C; REGUL, J; HOHLS, F et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 34, Num 1-2, pp 519-521, issn 1386-9477, 3 p.Conference Paper

Combined intersubband-cyclotron resonances in a GaAs-Ga_1-xAl_xAs heterojunctionWIECK, A. D; BOLLWEG, K; MERKT, U et al.Physical review. B, Condensed matter. 1988, Vol 38, Num 14, pp 10158-10161, issn 0163-1829Article

Local two-dimensional electron gas formation in p-doped GaAs/In_yGa_1-yAs/Al_xGa_1-xAs heterostructures by focused Si-implantation dopingREUTER, D; MEIER, C; RIEDESEL, C et al.Semiconductor science and technology. 2002, Vol 17, Num 6, pp 585-589, issn 0268-1242Article

Si accumulation at the surface upon re-evaporation of Si-doped GaAs(100)REUTER, D; SCHAFMEISTER, P; KAILUWEIT, P et al.Semiconductor science and technology. 2003, Vol 18, Num 2, pp 115-117, issn 0268-1242, 3 p.Article

Quantum Hall effect in long and in mobility adjusted GaAs/Al_xGa_1-xAs samplesDIACONESCU, D; GOLDSCHMIDT, A; REUTER, D et al.Physica status solidi. B. Basic research. 2008, Vol 245, Num 2, pp 276-283, issn 0370-1972, 8 p.Article

The influence of device geometry on many-body effects in quantum point contacts : Signatures of the 0.7 anomaly, exchange and kondoKOOP, E. J; LERESCU, A. I; LIU, J et al.Journal of superconductivity and novel magnetism. 2007, Vol 20, Num 6, pp 433-441, issn 1557-1939, 9 p.Conference Paper

Mapping of the hole wave functions of self-assembled InAs-quantum dots by magneto-capacitance-voltage spectroscopyKAILUWEIT, P; REUTER, D; WIECK, A. D et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 159-162, issn 1386-9477, 4 p.Conference Paper

Dynamics of nuclear spins appearing in transport measurements of an inter-edge spin diode in tilted magnetic fieldsSUKHODUB, G; HOHLS, F; HAUG, R. J et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 34, Num 1-2, pp 355-358, issn 1386-9477, 4 p.Conference Paper